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RJK5020DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1263-0200 Rev.2.00 Dec 19, 2006
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
S
2
3
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 500 30 40 120 40 120 12.5 8.6 200 0.625 150 -55 to +150 Unit V V A A A A A mJ W C/W C C
Rev.2.00 Dec 19, 2006 page 1 of 6
RJK5020DPK
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.102 5150 525 55 52 115 180 125 126 26 54 0.90 450 Max -- 1 0.1 4.5 0.118 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 12.5 Rg = 10 VDD = 400 V VGS = 10 V ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Dec 19, 2006 page 2 of 6
RJK5020DPK
Main Characteristics
Power vs. Temperature Derating
400 1000 300 100 30 10 3 Operation in this 1 area is limited by
RDS(on)
Maximum Safe Operation Area
Pch (W)
ID (A)
300
1m
s
10
Channel Dissipation
s 0 s
10
200
Drain Current
100
0.3 0.1 0.03 0.01
PW = 10 ms (1shot) DC Operation (Tc = 25C)
Ta = 25C 1 3 10
0
50
100
150
200
30
100
300
1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 5.5 V 5.7 V 5.3 V 7V 100 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
20 10 5 2 1 0.5 0.2 0.1 Tc = 75C 25C -25C 0 2 4 6 8 10
30
Drain Current
20
VGS = 4.9 V
10 Pulse Test 0 4 8 12 16 20
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V 0.5
Static Drain to Source on State Resistance RDS(on) ()
Static Drain to Source on State Resistance vs. Drain Current
Static Drain to Source on State Resistance vs. Temperature
0.5 VGS = 10 V Pulse Test
0.4 ID = 40 A 20 A 0.2 10 A 0.1 0 -25
0.2 0.1 0.05
0.3
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
0
25
50
75
100 125 150
Drain Current
ID (A)
Case Temperature
Tc (C)
Rev.2.00 Dec 19, 2006 page 3 of 6
RJK5020DPK
Body-Drain Diode Reverse Recovery Time
1000 100000 30000 VGS = 0 f = 1 MHz Ciss
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 5 2 1 1 3 10 30 100 300 1000 di / dt = 100 A / s VGS = 0, Ta = 25C
Capacitance C (pF)
10000 3000 1000 300 100 30 10 0 100
Coss
Crss
200
300
Reverse Drain Current
IDR (A)
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
VDS (V) IDR (A)
ID = 40 A VDD = 100 V 250 V 400 V VDS
Reverse Drain Current vs. Source to Drain Voltage
VGS (V)
16 50
800
VGS
40
600
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
30
400
8
20 10 5, 10 V VGS = 0, -5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
200
VDD = 400 V 250 V 100 V 40 80 120 160
4
0 0 200
Gate Charge
Qg (nC)
Source to Drain Voltage
VSD (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V 4 ID = 10 mA 1 mA 3
Gate to Source Cutoff Voltage VGS(off) (V)
2 0.1 mA 1 0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (C)
Rev.2.00 Dec 19, 2006 page 4 of 6
RJK5020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 0.625C/W, Tc = 25C PDM
pu lse
0.05
0.03
D= PW T
0.02 1 0.0
1s
PW T
t ho
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 250 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
Rev.2.00 Dec 19, 2006 page 5 of 6
RJK5020DPK
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part No. RJK5020DPK-00-T0 Quantity 360 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Dec 19, 2006 page 6 of 6
0.3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0

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